International Business Machines Assigned Patent for Strained Thin Body Cmos Device Having Vertically Raised Source/drain Stressors with Single Spacer
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Oct. 7 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,546,228) developed by five co-inventors for a "strained thin body CMOS device having vertically raised source/drain stressors with single spacer." The co-inventors are Bruce B. Doris, Brewster, N.Y., Kangguo Cheng, Guilderland, N.Y., Ali Khakifirooz, Slingerlands, N.Y., Pranita Kulkarni, Slingerlands, N.Y., and Ghavam G. Shahidi, Pound Ridge, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate; forming a spacer layer over the semiconductor substrate and patterned gate structure; removing horizontally disposed portions of the spacer layer so as to form a vertical sidewall spacer adjacent the patterned gate structure; and forming a raised source/drain (RSD) structure over the semiconductor substrate and adjacent the vertical sidewall spacer, wherein the RSD structure has a substantially vertical sidewall profile so as to abut the vertical sidewall spacer and produce one of a compressive and a tensile strain on a channel region of the semiconductor substrate below the patterned gate structure."
The patent application was filed on June 16, 2010 (12/816,399). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8546228.PN.&OS=PN/8546228&RS=PN/8546228
Written by Sudarshan Harpal; edited by Jaya Anand.
(c) 2013 Targeted News Service
[ Back To Technology News's Homepage ]