Fairchild Semiconductor Assigned Patent for Trench-based Power Semiconductor Devices
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Oct. 26 -- Fairchild Semiconductor, South Portland, Maine, has been assigned a patent (8,563,377) developed by Joseph A. Yedinak, Mountain Top, Pa., Daniel Calafut, San Jose, Calif., and Dean E. Probst, West Jordan, Utah, for "trench-based power semiconductor devices with increased breakdown voltage characteristics."
The patent application was filed on April 11, 2012 (13/443,986). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=2&f=G&l=50&co1=AND&d=PTXT&s1=20131022.PD.&s2=%28ME.ASST.%29&OS=ISD/10/22/2013+AND+AS/ME&RS=ISD/10/22/2013+AND+AS/ME
Written by Deviprasad Jena; edited by Jaya Anand.
(c) 2013 Targeted News Service
[ Back To Technology News's Homepage ]