|[March 28, 2014]
Efficient Power Conversion (EPC) to Present DC-DC Converter Using eGaN® Transistors Operating at 10 MHz with 89% Peak Efficiency and the Ability to Operate in Harsh Environmental Conditions at GOMACTech Conference
EL SEGUNDO, Calif. --(Business Wire)--
Efficient Power Conversion Corporation, the world's leader in
enhancement-mode gallium nitride on silicon (eGaN®) power
transistors, will be presenting at the 39th Annual Government
Microcircuit Applications and Critical Technology (GOMACTech)
Conference, which will be held in Charleston, South Carolina, on April 3rd.
Enhancement-mode gallium nitride transistors have been commercially
available since 2010. In that time they have enabled significant
efficiency improvement in commercial DC-DC converters in a variety of
topologies and at a variety of power levels. Enhancement-mode
transistors have also demonstrated remarkable
tolerance to gamma radiation and single event effects (SEE).
Compared to radiation-tolerant power MOSFETs, GaN FETs offer up to a 40
times improvement in key switching performance figures of merits. This
enables designers of space-level power supplies to achieve the
efficiencies of commercial state-of-the-art systems.
"We are excited to have the opportunity to share the results of EPC's
latest generation of high performance eGaN power transistors and their
exceptional results in radiation testing. These GaN-on-silicon power
transistors, designed for multi-megahertz switching converter
applications, allow the designer of radiation-tolerant systems to
achieve power densities and efficiencies that equal the commercial
state-of-the-art," said Alex Lidow.
About GOMACTech 2014
was established primarily to review developments in microcircuit
applications for government systems. Established in 1968, the conference
has focused on advances in systems being developed by the Department of
Defense and other government agencies and has been used to announce
major government microelectronics initiatives such as VHSIC and MIMIC,
and provides a forum for government reviews.
EPC is the leader in enhancement-mode gallium nitride based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as DC-DC
power transfer, envelope
tracking, RF transmission, solar micro inverters, remote
sensing technology (LiDAR), and class-D
audio amplifiers with device performance many times greater than the
best silicon power MOSFETs.
Visit our web site: www.epc-co.com
Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates
or text "EPC" to 22828
Follow EPC on Twitter (News - Alert) at http://twitter.com/#!/EPC_CORP
EPC on Facebook (News - Alert) at http://www.facebook.com/EPC.Corporation
eGaN is a registered trademark of Efficient Power Conversion
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