|[July 24, 2014]
Efficient Power Conversion (EPC) Lends Support to the "Little Box Challenge" Presented by Google and IEEE to Build a (Much) Smaller Power Inverter
EL SEGUNDO, Calif. --(Business Wire)--
Power Conversion Corporation (EPC) announces its support for
contestants in "Little Box Challenge" presented by Google (News - Alert) and IEEE.
Little Box Challenge, with a $1,000,000 prize, is an open competition to
build a (much) smaller power inverter. eGaN® FETs are ideal
for this type of application due to their high power handling
capability, ultra fast switching speeds, and small size.
Why Little Box (News - Alert) Challenge?
The objective of Little Box Challenge is to create a smaller, cheaper,
power inverter for use in solar power systems. The inverter is the part
of the system that converts the DC power from the solar cells into the
AC power that is compatible with the established power grid
infrastructure. Reducing the cost of the inverter will have a
significant impact on the overall system cost of solar power.
Why Use eGaN Power Transistors?
High Efficiency/Low Losses
eGaN FET's switching performance
enables higher switching frequency compared to MOSFET solutions.
Higher frequency reduces the size of energy storage elements which
dominate inverter size.
Ultra Fast Switching Speed
eGaN FETs' small size and lateral
structure give extremely low capacitance and zero QRR.
Also, the Land Grid Array (LGA) package gives low inductance. These
attributes enable unprecedented switching performance - two to three
times that of a MOSFET. Switching speed is the key to increasing
switching frequency efficiently.
Gallium nitride (GaN) is a wide band gap device with
superior conductivity compared to traditional MOSFET technology,
resulting in smaller devices and lower capacitance for the same on
EPC is excited to be a supporter of this contest. If your team is
interested in exploring the possibility of using EPC's eGaN®
FETs in a high power density inverter for the Little Box Challenge
presented by Google and IEEE (News - Alert), visit us at http://epc-co.com/epc/LittleBoxChallenge.aspx.
EPC is the leader in enhancement mode gallium nitride based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as DC-DC
power transfer, envelope
tracking, RF transmission, solar
sensing technology (LiDAR), and class-D
audio amplifiers with device performance many times greater than the
best silicon power MOSFETs.
Visit our web site: www.epc-co.com
Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates
or text "EPC" to 22828
Follow EPC on Twitter (News - Alert) at http://twitter.com/#!/EPC_CORP
EPC on Facebook (News - Alert) at http://www.facebook.com/EPC.Corporation
eGaN is a registered trademark of Efficient Power Conversion
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