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SunEdison Semiconductor Assigned Patent(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., Oct. 23 -- SunEdison Semiconductor, St. Peters, Missouri, has been assigned a patent (8,853,054) developed by two co-inventors for a method "for preparing multilayer semiconductor structures, such as silicon-on-insulator wafers, having reduced warp and bow." The co-inventors are Guoqiang Zhang, Ballwin, Missouri, and Jeffrey L. Libbert, O'Fallon, Missouri. The patent application was filed on March 6, 2012 (13/413,284). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8853054.PN.&OS=PN/8853054&RS=PN/8853054 Written by Lesley Gonzales; edited by Vessie Ann Abalos. 22GonzalesLesl10222014-1070705 (c) 2014 Targeted News Service [ Back To TMCnet.com's Homepage ] |