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GaN Semiconductor Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2016 - 2024LONDON, Oct. 20, 2016 /PRNewswire/ -- As compared to gallium arsenide (GaAS) and silicon carbide (SiC), Gallium nitride (GaN) is a new technology and is a wide band gap semiconductor material. GaN semiconductor devices provide a competitive advantage in terms of thermal performance, efficiency, weight and size. GaN is anticipated to be the next generation power semiconductor and thus different countries are indulged in developing widespread applications of GaN semiconductors. The wide band gap semiconductor technology has matured rapidly over several years. In fact, Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) have been available as commercial off-the-shelf devices since 2005. Recently, the IMEC (Interuniversity Microelectronics Center) in Europe organized a "GaN-on-Si research program" in order to produce an 8 inch GaN-on-Si wafer. However, fully-fledged application of GaN semiconductor devices is still in the nascent stage as compared to silicon semiconductor devices that have been around for more than a decade. The competitive profiling of the key players in the global Gan semiconductor devices market and their market shares across four regions which include North America, Europe, Asia Pacific and Rest of the World (RoW) have been exhaustively covered under the purview of the study. Moreover, the distinct business strategies that have been adopted by the major players in the market have also been included in the report. A comprehensive analysis of market dynamics, which include the market drivers, restraints and opportunities, is included under the scope of the report. Market dynamics are the distinctive factors that influence the growth of the specific market and therefore help to study the current trends in the global market. Additionally, list of top GaN based IC manufacturers have also been included under the scope of the research. Thus, this report provides an inclusive study of the global GaN semiconductor devices market and also provides the forecast of the market for the period from 2016-2024. Some of the major players in the market are: Mersen S.A., Avogy, Inc., Fujitsu Limited, GaN Systems Inc., Cree Inc., NXP Semiconductors N.V., Renesas Electronics Corporation, Toshiba Corporation, Everlight Electronics Co. and Efficient Power Conversion Corporation The global GaN semiconductor devices market has been segmented into: Global GaN semiconductor devices market, by Products Power Semiconductors GaN Radio Frequency Devices Opto-semiconductors Global GaN semiconductor devices market, by Wafer Size: The market is broadly segmented on the basis of wafer size into: 2 inch 4 inch 6 inch 8 inch Global GaN semiconductor devices market, by Application: The market is broadly segmented on the basis of application into: Information and Communication Technology Automotive Consumer Electronics Defense and Aerospace Others Global GaN semiconductor devices market, by Geography: The market is broadly segmented on the basis of geography into: North America Europe Asia Pacific Rest of the World Download the full report: https://www.reportbuyer.com/product/4239926/ To view the original version on PR Newswire, visit:http://www.prnewswire.com/news-releases/gan-semiconductor-devices-market---global-industry-analysis-size-share-growth-trends-and-forecast-2016---2024-300348795.html SOURCE ReportBuyer |